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KRF7105 - Power MOSFET

Key Features

  • Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Continuous Drain Current VGS @ 10V Ta = 25 ID Continuous Drain Current VGS @ 10V Ta = 70 ID Pulsed Drain Current.
  • 1 IDM Power Dissipation @Tc= 25 PD Linear Derating Factor Peak Diode Recovery dv/dt.
  • 2 dv/dt Gate-to-Source Voltage VGS Junction and Storage Temperat.

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Full PDF Text Transcription (Reference)

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SMD Type HEXFET Power MOSFET KRF7105 Features Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Continuous Drain Current VGS @ 10V Ta = 25 ID Continuous Drain Current VGS @ 10V Ta = 70 ID Pulsed Drain Current *1 IDM Power Dissipation @Tc= 25 PD Linear Derating Factor Peak Diode Recovery dv/dt *2 dv/dt Gate-to-Source Voltage VGS Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient*3 R JA *1 Repetitive rating; pulse width limited by max. junction temperature. N-Channel P-Channel 3.5 -2.3 2.8 -1.8 14 -10 2.0 0.016 3.0 -3.0 20 -55 to + 150 62.5 *2 N-Channel ISD 3.