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AO6808 - Dual N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 20V.
  • ID =6 A (VGS = 4.5V).
  • RDS(ON) ＜ 23mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 25mΩ (VGS = 4V).
  • RDS(ON) ＜ 27mΩ (VGS = 3.1V).
  • RDS(ON) ＜ 30mΩ (VGS = 2.5V).
  • ESD Rating: 2000V HBM ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 +0.1 1.1 -0.1 MOSFET Unit: mm 0.4 0.55 0.15 +0.02 -0.02 1 S1 4 G2 2 D1/D2 5 D1/D2 3 S2 6 G1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Vo.

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SMD Type Dual N-Channel MOSFET AO6808 (KO6808) ■ Features ● VDS (V) = 20V ● ID =6 A (VGS = 4.5V) ● RDS(ON) ＜ 23mΩ (VGS = 4.5V) ● RDS(ON) ＜ 25mΩ (VGS = 4V) ● RDS(ON) ＜ 27mΩ (VGS = 3.1V) ● RDS(ON) ＜ 30mΩ (VGS = 2.5V) ● ESD Rating: 2000V HBM ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 +0.1 1.1 -0.1 MOSFET Unit: mm 0.4 0.55 0.15 +0.02 -0.02 1 S1 4 G2 2 D1/D2 5 D1/D2 3 S2 6 G1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25℃ TA=70℃ Power Dissipation TA=25℃ TA=70℃ Thermal Resistance.Junction- to-Ambient Thermal Resistance.