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AO6800 - Dual N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 30V.
  • ID =3.4 A (VGS = 10V).
  • RDS(ON) ＜ 60mΩ (VGS = 10V).
  • RDS(ON) ＜ 70mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 90mΩ (VGS = 2.5V) ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.1 -0.1 +0.2 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 +0.1 1.1 -0.1 D1 D2 G1 G2 S1 S2 0-0.1 +0.1 0.68 -0.1 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter.

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SMD Type Dual N-Channel MOSFET AO6800 (KO6800) ■ Features ● VDS (V) = 30V ● ID =3.4 A (VGS = 10V) ● RDS(ON) ＜ 60mΩ (VGS = 10V) ● RDS(ON) ＜ 70mΩ (VGS = 4.5V) ● RDS(ON) ＜ 90mΩ (VGS = 2.5V) ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.1 -0.1 +0.2 -0.1 +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 +0.1 1.1 -0.1 D1 D2 G1 G2 S1 S2 0-0.1 +0.1 0.68 -0.1 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.