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AO6801E - Dual P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-2A (VGS =-10V).
  • RDS(ON) ＜ 110mΩ (VGS =-10V).
  • RDS(ON) ＜ 135mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 185mΩ (VGS =-2.5V).
  • ESD Rating: 2000V HBM D1 D2 G1 G2 S1 S2 ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 0.4 Unit: mm +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 1 2 3 +0.01 -0.01 +0.2 -0.1 0.15 +0.02 -0.02 +0.1 1.1 -0.1 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1 0-0.1 +0.1 0.68 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-S.

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SMD Type Dual P-Channel MOSFET AO6801E (KO6801E) MOSFET ■ Features ● VDS (V) =-30V ● ID =-2A (VGS =-10V) ● RDS(ON) ＜ 110mΩ (VGS =-10V) ● RDS(ON) ＜ 135mΩ (VGS =-4.5V) ● RDS(ON) ＜ 185mΩ (VGS =-2.5V) ● ESD Rating: 2000V HBM D1 D2 G1 G2 S1 S2 ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 0.4 Unit: mm +0.2 1.6 -0.1 +0.2 2.8 -0.1 0.55 1 2 3 +0.01 -0.01 +0.2 -0.1 0.15 +0.02 -0.02 +0.1 1.1 -0.1 1 Gate1 4 Drain2 2 Source2 5 Source1 3 Gate2 6 Drain1 0-0.1 +0.1 0.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.