Dual N-Channel Enhancement Mode Field Effect Transistor
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AO6801E
30V Dual P-Channel MOSFET
General Description
Product Summary
The AO6801E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.