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AO3410 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 30V.
  • ID = 5.8 A (VGS = 10V).
  • RDS(ON) ＜ 28mΩ (VGS = 10V).
  • RDS(ON) ＜ 33mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 52mΩ (VGS = 2.5V).
  • RDS(ON) ＜ 70mΩ (VGS = 1.8V) N-Channel MOSFET AO3410 (KO3410) SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.1 2.4 -0.1 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 D +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-.

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SMD Type ■ Features ● VDS (V) = 30V ● ID = 5.8 A (VGS = 10V) ● RDS(ON) ＜ 28mΩ (VGS = 10V) ● RDS(ON) ＜ 33mΩ (VGS = 4.5V) ● RDS(ON) ＜ 52mΩ (VGS = 2.5V) ● RDS(ON) ＜ 70mΩ (VGS = 1.8V) N-Channel MOSFET AO3410 (KO3410) SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.1 2.4 -0.1 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 D +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.