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2SJ9435 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-4.2 A.
  • RDS(ON) ＜ 50mΩ (VGS =-10V).
  • RDS(ON) ＜ 90mΩ (VGS =-4.5V) 1.Gate 2.Drain 3.Source 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source.
  • Absolute Maximum Ratings (Ta = 25℃) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1, 2) Power Dissipation Thermal Resistance. Junction- to-Ambient (Note 3) Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg Notes:.

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SMD Type P-Channel MOSFET 2SJ9435 TraMnOsiSsFtoErsT ■ Features ● VDS (V) =-30V ● ID =-4.2 A ● RDS(ON) ＜ 50mΩ (VGS =-10V) ● RDS(ON) ＜ 90mΩ (VGS =-4.5V) 1.Gate 2.Drain 3.Source 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings (Ta = 25℃) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1, 2) Power Dissipation Thermal Resistance.Junction- to-Ambient (Note 3) Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300µs , duty cycle ≤2%. 3: Surface mounted on 1 in 2 copper pad of FR4 board, t ≤10s. Rating -30 ±20 -4.2 -20 1.25 100 150 -55 to 150 Unit V A W ℃/W ℃ www.kexin.com.