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2SJ90 - Silicon P-Channel Transistor

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Features

  • . 1 Chip Dual Type. . High lYf s l : I Yf s l =22ms(Typ. (VdS=-10V, VGS=0,f=lkHz, lDSS=-3mA) . Good Pair Characteristics : 1 VGS1-VGS2 I =30mV (Max . (Vds="10V , lD=-lmA) . Very Low Noise : NF=0. 5dB(Typ. (Vds=-1°v > lD=-lmA, Rg=lkfi, f=lkHz) . Very High Input Impedance : lGSS=10nA(Max. (VGS=30V, VDS=0) Unit in mm.

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Datasheet Details

Part number 2SJ90
Manufacturer Toshiba
File Size 143.32 KB
Description Silicon P-Channel Transistor
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2SJ90 SILICON MONOLITHIC P CHANNEL JUNCTION TYPE LOW NOISE AUDIO AMPLIFIER APPLICATIONS. DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES . 1 Chip Dual Type. . High lYf s l : I Yf s l =22ms(Typ. (VdS=-10V, VGS=0,f=lkHz, lDSS=-3mA) . Good Pair Characteristics : 1 VGS1-VGS2 I =30mV (Max . (Vds="10V , lD=-lmA) . Very Low Noise : NF=0. 5dB(Typ. (Vds=-1°v > lD=-lmA, Rg=lkfi, f=lkHz) . Very High Input Impedance : lGSS=10nA(Max. (VGS=30V, VDS=0) Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation SYMBOL VGDS IG PD RATING 30 10 200 UNIT mA nW/UNr: 1. DRAIN 1 2. GATE 1 a SOURCE 1 4. SUBSTRATE JEDEC Toshiba 5 SOURCE 2 6 GATE 2 7. DRAIN 2 2-18A1A Junction Temperature 125 Weight: 0.
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