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2SD1257 - Silicon NPN Transistor

Features

  • Low collector-emitter saturation voltage VCE(sat). Satisfactory linearity of forward current transfer ratio hFE. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 Large collector current IC. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SD1257 2SD1257A Collector-emitter voltage 2SD1257 2SD1257A Emitter-base voltage.

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Other Datasheets by Kexin Semiconductor

Part Number Description
2SD1257A Silicon NPN Transistor
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Full PDF Text Transcription (Reference)

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SMD Type Silicon NPN Epitaxial Planar Type 2SD1257,2SD1257A TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-emitter saturation voltage VCE(sat). Satisfactory linearity of forward current transfer ratio hFE. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 Large collector current IC. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SD1257 2SD1257A Collector-emitter voltage 2SD1257 2SD1257A Emitter-base voltage Collector current Peak collector current Collector power dissipation Ta = 25 VEBO IC ICP PC Tj Tstg VCEO Symbol VCBO Rating 130 150 80 100 7 7 15 1.
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