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2KK5089DFN - N-Channel MOSFET

Key Features

  • s.
  • VDS = 30 V.
  • ID = 10 A.
  • Low RDS(on) trench technology.
  • Fast Switching Speed.
  • Low Thermal Impedance.
  • ESD Protected Gate MOSFET N-Channel MOSFET 2KK5089DFN DFN2X2-6 DFN2X2-6 bottom view.
  • Absolute Maximum Ratings (Ta = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (Note 1) TA=25℃ ID TA=70℃ Pulsed Drain Current (Note 2) IDM Avalanche Current IAS Avalanche Energy L = 0.1 mH EA.

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SMD Type ■ Features ● VDS = 30 V ● ID = 10 A ● Low RDS(on) trench technology ● Fast Switching Speed ● Low Thermal Impedance ● ESD Protected Gate MOSFET N-Channel MOSFET 2KK5089DFN DFN2X2-6 DFN2X2-6 bottom view ■ Absolute Maximum Ratings (Ta = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (Note 1) TA=25℃ ID TA=70℃ Pulsed Drain Current (Note 2) IDM Avalanche Current IAS Avalanche Energy L = 0.1 mH EAS Power Dissipation (Note 1) TA=25℃ PD TA=70℃ (Note 1) Thermal Resistance, Junction- to-Ambient RθJA (Note 3) Operating Junction Temperature TJ Storage Temperature Range Tstg Notes: 1. Surface mounted on "1.5 x 1.5" FR4 board using 1 sq in pad, 2 oz Cu. 2.