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2KK5082DFN - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 40 V.
  • ID = 35 A (at VGS = 10 V).
  • RDS(ON) (at VGS = 10 V) < 15 mΩ.
  • RDS(ON) (at VGS = 4.5 V) < 19 mΩ S S S G PDFN3.3x3.3-8 Top View Pin 1 Top View D 1 8 2 7 D 3 6 4 5 D D Bottom View.
  • Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 40 V VGS ±20 TA=25℃ 35 Continuous Drain Current (Note 1, 3) ID TA=100℃ 27 A Pulsed Drain Current (Note 2) IDM.

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SMD Type MOSFET N-Channel MOSFET 2KK5082DFN ■ Features ● VDS (V) = 40 V ● ID = 35 A (at VGS = 10 V) ● RDS(ON) (at VGS = 10 V) < 15 mΩ ● RDS(ON) (at VGS = 4.5 V) < 19 mΩ S S S G PDFN3.3x3.3-8 Top View Pin 1 Top View D 1 8 2 7 D 3 6 4 5 D D Bottom View ■ Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 40 V VGS ±20 TA=25℃ 35 Continuous Drain Current (Note 1, 3) ID TA=100℃ 27 A Pulsed Drain Current (Note 2) IDM 70 Power Dissipation TA=25℃ 25 PD W TA=100℃ 9 Junction Temperature Storage Temperature Range TJ 150 ℃ Tstg -55 to 150 Notes: 1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz.