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2KK5010E - N-Channel Enhancement MOSFET

Features

  • ƽ VDS (V) = 20V ƽ ID = 6.5 A (VGS = 4.5V) ƽ RDS(ON) ˘ 22m¡ (VGS = 4.5V) ƽ RDS(ON) ˘ 26m¡ (VGS = 2.5V) D ƽ RDS(ON) ˘ 34m¡ (VGS = 1.8V) G S    627       3 1 2        1.6       8QLW PP    .
  • DWH  6RXUFH  'UDLQ     Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25ć Ta=70ć Pulsed Drain Curr.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type N-Channel Enhancement MOSFET 2KK5010E MOSFET Ƶ Features ƽ VDS (V) = 20V ƽ ID = 6.5 A (VGS = 4.5V) ƽ RDS(ON) ˘ 22m¡ (VGS = 4.5V) ƽ RDS(ON) ˘ 26m¡ (VGS = 2.5V) D ƽ RDS(ON) ˘ 34m¡ (VGS = 1.8V) G S    627       3 1 2        1.6       8QLW PP     *DWH  6RXUFH  'UDLQ     Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25ć Ta=70ć Pulsed Drain Current Power Dissipation Ta=25ć Ta=70ć Thermal Resistance.Junction- to-Ambient tİ10sec Steady State Thermal Resistance.
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