1SS133S
Features
- Glass sealed envelope
- High speed
- High reliability
- High-speed switching
Silicon Epitaxial Planar Switching Diode
C D Cathode Mark
Maximum Ratings (TA=25℃ unless otherwise noted)
Peak Reverse Voltage
Parameter
DC Reverse Voltage
Average Rectified Forward Current
Peak Forward Current
Surge Forward Current at t < 1 s
Power Dissipation
Junction Temperature Storage Temperature Range
Electrical Characteristics (TA=25℃ unless otherwise noted)
Parameter Forward Voltage at IF = 100 m A Reverse Current at VR = 80 V Capacitance between Terminals at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at IF = 10 m A, VR = 6 V, RL = 50 Ω
DO-34
INCHES
MIN MAX MIN MAX
A 1.083 --- 27.50 ---
--- 0.114 ---
--- 0.018 ---
--- 0.075 ---
Symbol VRM VR IF(AV) IFM IFSM Ptot Tj Tstg
Value 90 80 130 400 600 300 175
- 65 to + 175
Unit V V m A m A m A m W ℃ ℃
Symbol VF IR CT trr
Max. 1.2 0.5 2 4
Unit V µA p F ns
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