1SS133
Features
1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability.
29.0±1.0
2.7±0.3
29.0±1.0
φ1.8±0.2
ROHM : MSD EIAJ :
- JEDEC : DO-34
!Construction Silicon epitaxial planar
!Absolute maximum ratings (Ta=25°C)
Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge P Tj Tstg Limits 90 80 400 130 600 300 175
- 65~+175 Unit V V m A m A m A m W
°C °C
!Electrical characteristics (Ta=25°C)
Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR CT trr Min.
- -
- - Typ.
- -
- - Max. 1.2 0.5 2 4 Unit V µA p F ns IF=100m A VR=80V VR=0.5V, f=1MHz VR=6V, IF=10m A, RL=50Ω Conditions
Diodes
!Electrical characteristics curves (Ta=25°C)
CAPACITANCE BETWEEN TERMINALS : CT(p F)
100 50
FORWARD CURRENT : IF (m A)
3.0 f=1MHz 2.5 2.0 1.5 1.0 0.5 0 0
REVERSE CURRENT : IR...
