• Part: 1SS133M
  • Description: Hermetically Sealed Glass Switching Diodes
  • Category: Diode
  • Manufacturer: Taiwan Semiconductor
  • Size: 213.58 KB
Download 1SS133M Datasheet PDF
Taiwan Semiconductor
1SS133M
FEATURES - Fast switching device (trr < 4.0 ns) - Through-hole mount device type - DO-34 package (JEDEC DO-204) - Hermetically sealed glass - pression bonded construction - All external surfaces are corrosion resistant and leads are readily solderable - Ro HS pliant - Solder hot dip Tin (Sn) lead finish - Cathode indicated by polarity band - Marking code: 133 DO-34 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation PD 300 Working Inverse Voltage WIV 90 Average Rectified Current IO 150 Non-Repetitive Peak Forward Current Peak Forward Surge Current IFM IFSURGE 450 2 Operating Junction Temperature TJ + 175 Storage Temperature Range TSTG -65 to +200 UNIT m W V m A m A A o C o C PARAMETER SYMBOL Breakdown Voltage Forward Voltage Reverse Leakage Current Junction Capacitance IR=500n A IF=100m A VR=80V VR=0, f=1.0MHz BV VF IR Cj Reverse Recovery Time (Note 1) trr Notes: 1. Reverse Recovery Test...