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CJQ6601 - N-channel and P-channel Complementary MOSFETS

Description

RDS(ON) and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

Features

  • Including a N-ch CJ3400 MOS and a P-ch.
  • Surface mount package CJ3401 MOS (independently) in a package.
  • Low RDS(on).

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Datasheet Details

Part number CJQ6601
Manufacturer JCET
File Size 1.44 MB
Description N-channel and P-channel Complementary MOSFETS
Datasheet download datasheet CJQ6601 Datasheet
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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ6601 N-channel and P-channel Complementary MOSFETS V(BR)DSS 30 V -30V RDS(on)MAX   35mΩ@10V  40mΩ@4.5V  52mΩ@2.5V     65mΩ@-10V  75mΩ@-4.5V  90mΩ@-2.5V   ID 5.8 A -4.2A SOP8 DESCRIPTIONS The Device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. FEATURES  Including a N-ch CJ3400 MOS and a P-ch  Surface mount package CJ3401 MOS (independently) in a package  Low RDS(on) APPLICATIONS  Suitable for a multitude of applications.
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