CJQ08N02K - N-Channel Power MOSFET

Description

low gate charge and operation with gate voltages as low as 1.8V.

Features

Advanced high cell density Trench technology.
Super Low Gate Charge.
Green Device Available.
High power and current handing capability.
Surface mount package.
ESD protested.

JCET

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Datasheet Details

Part number	CJQ08N02K
Manufacturer	JCET
File Size	663.14 KB
Description	N-Channel Power MOSFET
Datasheet	CJQ08N02K Datasheet
Additional preview pages of the CJQ08N02K datasheet.

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ08N02K N-Channel Power MOSFET DESCRIPTION The device uses advanced trench technology to provide excellent RDS(ON), SOP8 low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .

Published: Dec 21, 2016 |