CJQ05N10 - Dual N-channel MOSFET

Description

provide excellent RDS(ON) with low gate charge .This device is suitable for use in a wide variety of applications.

Features

z Lead free product is acquired z Special process technology for high ESD capability z High density cell design for ultra low RDS(on) z Good stability and uniformity with high EAS z Excellent package for good heat dissipation.

JCET

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Datasheet Details

Part number	CJQ05N10
Manufacturer	JCET
File Size	0.96 MB
Description	Dual N-channel MOSFET
Datasheet	CJQ05N10 Datasheet
Additional preview pages of the CJQ05N10 datasheet.

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ05N10 Dual N-Channel MOSFET V(BR)DSS RDS(on)MAX ID 100V 140mΩ@10V 5A DESCRIPTION The CJQ05N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is suitable for use in a wide variety of applications.

Published: Feb 8, 2017 |