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CJND8804 - Dual N-Channel MOSFET

Description

excellent RDS(ON) and low gate charge.

It is ESD protected.

by its common-drain configuration.

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Datasheet Details

Part number CJND8804
Manufacturer JCET
File Size 858.49 KB
Description Dual N-Channel MOSFET
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB5×2-6L-A Plastic-Encapsulate MOSFETS CJND8804 V(BR)DSS   20V Dual N-Channel MOSFET RDS(on)MAX  13mΩ@10V 14mΩ @4.5V 15.5mΩ@3.8V 19 mΩ@2.5V 27mΩ@1.8V ID   8A   DFNWB5×2-6L-A DESCRIPTION The CJND8804 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration.
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