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CJND2007 - Dual N-Channel MOSFET

Description

excellent RDS(ON) and low gate charge.

It is ESD protected.

This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration.

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Datasheet Details

Part number CJND2007
Manufacturer JCET
File Size 654.51 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet CJND2007 Datasheet
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB5×2-6L-A Plastic-Encapsulate MOSFETS CJND2007 V(BR)DSS 20V   Dual N-Channel MOSFET RDS(on)MAX  20mΩ@10V 22mΩ @4.5V 24 mΩ@3.8V 26mΩ@2.5V 35mΩ@1.8V ID   7A   DFNWB5×2-6L-A DESCRIPTION The CJND2007 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration.
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