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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB5X2-6L-A Plastic-Encapsulate MOSFETS
CJND2010 N-channel MOSFET
V(BR)DSS
RDS(on)MAX
9.5mΩ@4.5V
10mΩ@4V
20V 10.5mΩ@3.5V 11.5mΩ@3.1V
13mΩ@2.5V
ID
10A
DFNWB5X2-6L-A
FEATURE TrenchFET Power MOSFET Small package DFNWB5×2-6L-A
MARKING
APPLICATION ● Load Switch for Portable Applications
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Para
meter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current (note 1)
IDM Collector Current-Pulse(Note3)
RθJA Thermal Resistance from Junction to Ambient (note 2)
Tj Junction Temperature
Tstg Storage Temperature
TL Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Value 20 ±10 10 36
113.
CJND2010 Datasheet
