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ITF86174SQT - 9A/ 30V/ 0.016 Ohm/ P-Channel/ Logic Level/ Power MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.016Ω, VGS =.
  • 10V - rDS(ON) = 0.024Ω, VGS =.
  • 4.5V - rDS(ON) = 0.027Ω, VGS =.
  • 4V.
  • Gate to Source Protection Diode.
  • Simulation Models - Temperature Compensated PSPICE™ and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www. intersil. com.
  • Peak Current vs Pulse Width Curve 5 1 23 4 Symbol DRAIN(1) SOURCE(2) DRAIN(8) SOURCE(7).
  • Transient Thermal Impedance Curve vs Board M.

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Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ITF86174SQT Data Sheet March 2000 File Number 4799.3 9A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET Packaging TSSOP-8 Features • Ultra Low On-Resistance - rDS(ON) = 0.016Ω, VGS = −10V - rDS(ON) = 0.024Ω, VGS = −4.5V - rDS(ON) = 0.027Ω, VGS = −4V • Gate to Source Protection Diode • Simulation Models - Temperature Compensated PSPICE™ and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.intersil.com • Peak Current vs Pulse Width Curve 5 1 23 4 Symbol DRAIN(1) SOURCE(2) DRAIN(8) SOURCE(7) • Transient Thermal Impedance Curve vs Board Mounting Area • Switching Time vs RGS Curves Ordering Information PART NUMBER ITF86174SQT PACKAGE TSSOP-8 86174 BRAND SOURCE(3) GATE(4) SOURCE(6) DRAIN(5) NOTE: When ordering, use the entire part number.