Datasheet4U Logo Datasheet4U.com

ITF86110DK8T - 7.5A/ 30V/ 0.025 Ohm/ Dual N-Channel/ Logic Level/ Power MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.025Ω, VGS = 10V - rDS(ON) = 0.034Ω, VGS = 4.5V - rDS(ON) = 0.042Ω, VGS = 4.0V.
  • Gate to Source Protection Diode.
  • Simulation Models - Temperature Compensated PSPICE™ and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www. intersil. com [ /Title Packaging SO8 (JEDEC MS-012AA) (HUF7 6400S.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ITF40PF1200DHGTLB Trench IGBT IXYS
ITF48IF1200HR IGBT IXYS

Other Datasheets by Intersil (Renesas)

Part Number Description
ITF86116SQT 10A/ 30V/ 0.012 Ohm/ N-Channel/ Logic Level/ Power MOSFET
ITF86130SK8T 14A/ 30V/ 0.0078 Ohm/ N-Channel/ Logic Level/ Power MOSFET
ITF86172SK8T 10A/ 30V/ 0.016 Ohm/ P-Channel/ Logic Level/ Power MOSFET
ITF86174SQT 9A/ 30V/ 0.016 Ohm/ P-Channel/ Logic Level/ Power MOSFET
ITF86182SK8T 11A/ 30V/ 0.0115 Ohm/ P-Channel/ Logic Level/ Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ITF86110DK8T Data Sheet January 2000 File Number 4807.2 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Logic Level, Power MOSFET Features • Ultra Low On-Resistance - rDS(ON) = 0.025Ω, VGS = 10V - rDS(ON) = 0.034Ω, VGS = 4.5V - rDS(ON) = 0.042Ω, VGS = 4.0V • Gate to Source Protection Diode • Simulation Models - Temperature Compensated PSPICE™ and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.intersil.com [ /Title Packaging SO8 (JEDEC MS-012AA) (HUF7 6400S BRANDING DASH K8) /Sub5 ject (60V, 1 0.