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ITF86116SQT - 10A/ 30V/ 0.012 Ohm/ N-Channel/ Logic Level/ Power MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V.
  • Gate to Source Protection Diode.
  • Simulation Models - Temperature Compensated PSPICE™ and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www. intersil. com.
  • Peak Current vs Pulse Width Curve.
  • Transient Thermal Impedance Curve vs Board Mounting Area 5 1 23 4 Symbol DRAIN(1) SOURCE(2) DRAIN(8) SOURCE(7).
  • Switching Time vs RGS Curves Ord.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ITF86116SQT Data Sheet March 2000 File Number 4808.2 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 Features • Ultra Low On-Resistance - rDS(ON) = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models - Temperature Compensated PSPICE™ and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.intersil.com • Peak Current vs Pulse Width Curve • Transient Thermal Impedance Curve vs Board Mounting Area 5 1 23 4 Symbol DRAIN(1) SOURCE(2) DRAIN(8) SOURCE(7) • Switching Time vs RGS Curves Ordering Information PART NUMBER ITF86116SQT PACKAGE TSSOP-8 86116 BRAND SOURCE(3) GATE(4) SOURCE(6) DRAIN(5) NOTE: When ordering, use the entire part number. ITF86116SQT2 is available only in tape and reel.