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HS1-6664RH - Radiation Hardened 8K x 8 CMOS PROM

Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Features

  • QML Class T, Per MIL-PRF-38535.
  • Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - No Latch-Up, SEU LET >100MeV/mg/cm2.
  • Transient Output Upset >5 x 108 RAD (Si)/s.
  • Fast Access Time - 35ns (Typical).
  • Single 5V Power Supply, Synchronous Operation.
  • Single Pulse 10V Field Programmable NiCr Fuses.
  • On-Chip Address Latches, Three-State Outputs.
  • Low Standby Current.

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Other Datasheets by Intersil (Renesas)

Part Number Description
HS1-6664RH-T Radiation Hardened 8K x 8 CMOS PROM
HS1-6617RH Radiation Hardened 2K x 8 CMOS PROM
HS1-6617RH Radiation Hardened 2K x 8 CMOS PROM
HS1-6617RH-8 Radiation Hardened 2K x 8 CMOS PROM
HS1-6617RH-Q Radiation Hardened 2K x 8 CMOS PROM

Full PDF Text Transcription

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HS-6664RH-T Data Sheet July 1999 File Number 4609.1 Radiation Hardened 8K x 8 CMOS PROM Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The Intersil HS-6664RH-T is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high speed performance with very low power dissipation.
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