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HS1-6617RH - Radiation Hardened 2K x 8 CMOS PROM

Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Features

  • QML Class T, Per MIL-PRF-38535.
  • Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - SEU LET 16MeV/mg/cm2 - SEL LET 100MeV/mg/cm2.
  • Field Programmable Nicrome Fuse Links.
  • Low Standby Power 1.1mW Max.
  • Low Operating Power 137.5mW/MHz Max.
  • Fast Access Time 100ns Max.
  • TTL Compatible Inputs/Outputs.
  • Synchronous Operation.
  • On Chip Address Latches, Three-State Outputs Pinouts HS1-6617RH-T (SBDIP), CDIP2-T24 TOP VIEW A.

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Other Datasheets by Intersil (Renesas)

Part Number Description
HS1-6617RH Radiation Hardened 2K x 8 CMOS PROM
HS1-6617RH-8 Radiation Hardened 2K x 8 CMOS PROM
HS1-6617RH-Q Radiation Hardened 2K x 8 CMOS PROM
HS1-6617RH-T Radiation Hardened 2K x 8 CMOS PROM
HS1-6664RH Radiation Hardened 8K x 8 CMOS PROM

Full PDF Text Transcription

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HS-6617RH-T Data Sheet July 1999 File Number 4608.1 Radiation Hardened 2K x 8 CMOS PROM Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The Intersil HS-6617RH-T is a radiation hardened 16k CMOS PROM, organized in a 2K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and is designed to be functionally equivalent to the HM-6617. Synchronous circuit design techniques combine with CMOS processing to give this device high speed performance with very low power dissipation.
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