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HS1-6617RH-Q - Radiation Hardened 2K x 8 CMOS PROM

Description

The Intersil HS-6617RH is a radiation hardened 16K CMOS PROM, organized in a 2K word by 8-bit format.

The chip is manufactured using a radiation hardened CMOS process, and is designed to be functionally equivalent to the HM-6617.

Features

  • Total Dose 1 x 10 RAD (Si) Latch-Up Free >1 x 1012 RAD (Si)/s Field Programmable Functionally Equivalent to HM-6617 Pin Compatible with Intel 2716 Low Standby Power 1.1mW Max Low Operating Power 137.5mW/MHz Max Fast Access Time 100ns Max TTL Compatible Inputs/Outputs Synchronous Operation On Chip Address Latches Three-State Outputs Nicrome Fuse Lin.

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Other Datasheets by Intersil (Renesas)

Part Number Description
HS1-6617RH-8 Radiation Hardened 2K x 8 CMOS PROM
HS1-6617RH-T Radiation Hardened 2K x 8 CMOS PROM
HS1-6617RH Radiation Hardened 2K x 8 CMOS PROM
HS1-6617RH Radiation Hardened 2K x 8 CMOS PROM
HS1-6664RH Radiation Hardened 8K x 8 CMOS PROM

Full PDF Text Transcription

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HS-6617RH August 1995 Radiation Hardened 2K x 8 CMOS PROM Pinouts 5 Features • • • • • • • • • • • • • • • Total Dose 1 x 10 RAD (Si) Latch-Up Free >1 x 1012 RAD (Si)/s Field Programmable Functionally Equivalent to HM-6617 Pin Compatible with Intel 2716 Low Standby Power 1.1mW Max Low Operating Power 137.
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