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HRFZ44N
Data Sheet June 1999 File Number
4752
49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75329.