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HGTG40N60A4
TM
Data Sheet
April 2000
File Number
4782.2
600V, SMPS Series N-Channel IGBT
The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49347.
Features
• 100kHz Operation At 390V, 40A • 200kHz Operation At 390V, 20A • 600V Switching SOA Capability • Typical Fall Time. .
HGTG40N60A4 Datasheet
