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HGT5A40N60A4D - 600V/ SMPS Series N-Channel IGBT

Features

  • of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49347. The diode used in anti-parallel is the development type 49374. This IGBT is ideal for many high voltage switching.

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Full PDF Text Transcription

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HGT5A40N60A4D Data Sheet February 2000 File Number 4783.1 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49347. The diode used in anti-parallel is the development type 49374. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
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