HGT011NE6A
Feature
◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Teles and Inductrial
Part Number HGT011NE6A
Package Marking TOLL GT011NE6A
P-1
65V N-Ch Power MOSFET
VDS RDS(on),typ ID (Sillicon Limited) ID (Package Limited)
65 V 1 m W 397 A 240 A
TOLL
Drain
Gate Pin 1
Src Pin(2~8)
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
VDS VGS IDM EAS PD TJ, Tstg
TC=25℃ TC=100℃ TC=25℃ L=0.4m H, TC=25℃ TC=25℃
- Absolute Maximum Ratings Parameter
Thermal Resistance Junction-Ambient Thermal Resistance...
