Click to expand full text
HGTG27N120BN / HGT5A27N120BN
Data Sheet August 2002
72A, 1200V, NPT Series N-Channel IGBT
The HGTG27N120BN and HGT5A27N120BN are NonPunch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49280.
Features
• 72A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time. . . . . . .
HGT5A27N120BN Datasheet
