HGT1S2N120BNDS Datasheet PDF (12A 1200V NPT Series N-Channel IGBT) | Download Intersil Corporation HGT1S2N120BNDS

HGT1S2N120BNDS - 12A 1200V NPT Series N-Channel IGBT

Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49312. The Diode used is the development type TA49056. The IGBT is ideal for many high voltage switching.

Datasheet Details

Part number	HGT1S2N120BNDS
Manufacturer	Intersil Corporation
File Size	87.43 KB
Description	12A 1200V NPT Series N-Channel IGBT
Datasheet	HGT1S2N120BNDS Datasheet
Additional preview pages of the HGT1S2N120BNDS datasheet.

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Full PDF Text Transcription

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HGTP2N120BND, HGT1S2N120BNDS Data Sheet January 2000 File Number 4698.2 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49312. The Diode used is the development type TA49056.

Published: Mar 23, 2005 |