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HGT1S20N35G3VLS - N-Channel IGBT

Description

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits.

Features

  • Logic Level Gate Drive.
  • Internal Voltage Clamp.
  • ESD Gate Protection.
  • TJ = 175oC.
  • Ignition Energy Capable.

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Datasheet Details

Part number HGT1S20N35G3VLS
Manufacturer Fairchild Semiconductor
File Size 209.49 KB
Description N-Channel IGBT
Datasheet download datasheet HGT1S20N35G3VLS Datasheet
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HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS December 2001 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs Packages JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175oC • Ignition Energy Capable Description This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.
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