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Data Sheet
HGT1S20N60A4S9A
March 2006
600V, SMPS Series N-Channel IGBTs
The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49339.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1S20N60A4S9A
TO-263AB
20N60A4
NOTE: When ordering, use the entire part number.
HGT1S20N60A4S9A Datasheet
