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IRLU7833PBF - Power MOSFET

Download the IRLU7833PBF datasheet PDF. This datasheet also covers the IRLR7833PBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • 2 ) Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput This can be expanded and approximated by; ⎛Q ⎞ + ⎜ oss × Vin × f + (Qrr × Vin × f ) ⎝ 2 ⎠.
  • dissipated primarily in Q1. Ploss = (Irms 2 × Rds(on ) ) ⎛ Qgd +⎜I × × Vin × ig ⎝ + (Qg × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ ⎞ ⎞ ⎛ Qgs 2 f⎟ + ⎜ I × × Vin × f ⎟ ig ⎠ ⎠ ⎝ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is inclu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR7833PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRLU7833 N-Channel MOSFET INCHANGE
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLU7833 Power MOSFET
IRLU7807Z HEXFET Power MOSFET
IRLU7807ZPBF HEXFET Power MOSFET
IRLU7821 HEXFET Power MOSFET
IRLU7821CPBF POWER MOSFET

Full PDF Text Transcription

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PD - 95092C Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET IRLR7833PbF IRLU7833PbF 4.5m: VDSS RDS(on) max 30V Qg 33nC D-Pak I-Pak IRLR7833PbF IRLU7833PbF Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 140 99 560 140 71 0.95 -55 to + 175 300 (1.6mm from case) 10 lbf in (1.
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