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IRLU7807Z - HEXFET Power MOSFET

Download the IRLU7807Z datasheet PDF. This datasheet also covers the IRLR7807Z variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • at is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to th.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR7807Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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PD - 94662 IRLR7807Z IRLU7807Z Applications High Frequency Synchronous Buck Converters for Computer Processor Power Benefits Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.) 30V 13.8mΩ 7.0nC D-Pak IRLR7807Z I-Pak IRLU7807Z Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Max.
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