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IRLU7821CPBF - POWER MOSFET

Download the IRLU7821CPBF datasheet PDF. This datasheet also covers the IRLR7821CPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • hich are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Q gs2 is.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR7821CPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLU7821 HEXFET Power MOSFET
IRLU7821PBF Power MOSFET
IRLU7807Z HEXFET Power MOSFET
IRLU7807ZPBF HEXFET Power MOSFET
IRLU7833 Power MOSFET

Full PDF Text Transcription

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PD - 96056 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current HEXFET Power MOSFET IRLR7821CPbF IRLU7821CPbF ® 10m: VDSS RDS(on) max 30V Qg 10nC D-Pak IRLR7821CPbF I-Pak IRLU7821CPbF Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 Units V ™ f 47f 65 260 75 37.
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