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PD- 95589
IRL3102SPbF
HEXFET® Power MOSFET
D
VDSS = 20V RDS(on) = 0.013Ω
G
Lead-Free
S
ID = 61A
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07/20/04
IRL3102SPbF
Ω
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IRL3102SPbF
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IRL3102SPbF
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IRL3102SPbF
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IRL3102SPbF
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IRL3102SPbF
Peak Diode Recovery dv/dt Test Circuit
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Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
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• dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test
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Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
IRL3102SPBF Datasheet
