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PD- 95658
IRL3102PbF
HEXFET® Power MOSFET
Advanced Process Technology l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l Fast Switching l Lead-Free Description
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VDSS = 20V RDS(on) = 0.013Ω
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These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry.
ID = 61A
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IRL3102PBF Datasheet
