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IRHY58Z30CM - (IRHY5xZ30CM) RADIATION HARDENED POWER MOSFET

Download the IRHY58Z30CM datasheet PDF. This datasheet also covers the IRHY53Z30CM variant, as both devices belong to the same (irhy5xz30cm) radiation hardened power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHY53Z30CM_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHY58130CM (IRHY5x130CM) RADIATION HARDENED POWER MOSFET
IRHY58230CM RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHY53034CM RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHY53130CM (IRHY5x130CM) RADIATION HARDENED POWER MOSFET
IRHY53230CM RADIATION HARDENED POWER MOSFET THRU-HOLE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD-93824E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number Radiation Level RDS(on) IRHY57Z30CM 100K Rads (Si) 0.03Ω IRHY53Z30CM 300K Rads (Si) 0.03Ω IRHY54Z30CM 500K Rads (Si) IRHF58Z30CM 1000K Rads (Si) 0.03Ω 0.035Ω IRHY57Z30CM JANSR2N7482T3 30V, N-CHANNEL REF: MIL-PRF-19500/702 5 TECHNOLOGY ™ ID QPL Part Number 18A* JANSR2N7482T3 18A* JANSF2N7482T3 18A* JANSG2N7482T3 18A* JANSH2N7482T3 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).