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IRHNM57214SE - N-CHANNEL POWER MOSFET

Description

IR HiRel R5 technology provides high performance power MOSFETs for space applications.

These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).

Features

  • Single Event Effect (SEE) Hardened.
  • Low RDS(on).
  • Low Total Gate Charge.
  • Simple Drive Requirements.
  • Ease of Paralleling.
  • Hermetically Sealed.
  • Surface Mount.
  • Ceramic Package.
  • Light Weight.
  • ESD Rating: Class 1B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Parameter ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power.

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Full PDF Text Transcription

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PD-97818C IRHNM57214SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2) Product Summary Part Number Radiation Level RDS(on) ID IRHNM57214SE 100 kRads(Si) 1.7 2.4A Refer to page 9 for additional part number IRHNMC57214SE (Ceramic Lid) Description IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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