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IRGSL4B60KPBF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGSL4B60KPBF datasheet PDF. This datasheet also covers the IRGB4B60KPBF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free. C IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF VCES = 600V IC = 6.8A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.
  • Excellent Current.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGB4B60KPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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PD - 95643A INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free. C IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF VCES = 600V IC = 6.8A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 2.
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