Datasheet4U Logo Datasheet4U.com

IRGSL4B60KD1 - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGSL4B60KD1 datasheet PDF. This datasheet also covers the IRGB4B60KD1PBF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C E n-channel VCE(on) typ. = 2.1V Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transien.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGB4B60KD1PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRGSL4640DPbF Insulated Gate Bipolar Transistor Infineon
IRGS4620DPbF IGBT Infineon
IRGS4630DPbF IGBT Infineon
IRGS4640DPbF Insulated Gate Bipolar Transistor Infineon
IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGSL4B60KD1PbF Insulated Gate Bipolar Transistor
IRGSL4B60KPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGSL4062DPBF Power MOSFET
IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR
IRGSL10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription

Click to expand full text
PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C E n-channel VCE(on) typ. = 2.1V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation.
Published: |