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IRGS6B60KD - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGS6B60KD datasheet PDF. This datasheet also covers the IRGB6B60KD variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.
  • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGB6B60KD_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGS6B60KD INSULATED GATE BIPOLAR TRANSISTOR
IRGS6B60KDPBF Insulated Gate Bipolar Transistor
IRGS6B60K INSULATED GATE BIPOLAR TRANSISTOR
IRGS6B60KPBF Insulated Gate Bipolar Transistor
IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription

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www.DataSheet4U.com PD - 94381E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KD IRGS6B60KD IRGSL6B60KD VCES = 600V IC = 7.0A, TC=100°C Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB IRGB6B60KD D2Pak IRGS6B60KD Max. 600 13 7.0 26 26 13 7.
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