IRGS6B60K - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGS6B60K datasheet PDF. This datasheet also covers the IRGB6B60K variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient. C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = 7.0A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB IRGB6B60K.

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IRGS6B60K insulated gate bipolar transistor by International Rectifier - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRGB6B60K_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRGS6B60K
Manufacturer	International Rectifier (now Infineon)
File Size	285.73 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGS6B60K Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number	Description
IRGS6B60KD	INSULATED GATE BIPOLAR TRANSISTOR
IRGS6B60KD	INSULATED GATE BIPOLAR TRANSISTOR
IRGS6B60KDPBF	Insulated Gate Bipolar Transistor
IRGS6B60KPBF	Insulated Gate Bipolar Transistor
IRGS10B60KD	INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription

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www.DataSheet4U.com PD - 94575A INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = 7.0A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.

Published: Aug 17, 2007 |