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IRGP4660DPbF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant Benefits High efficiency in a wide range of.

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IRGP4660DPbF IRGP4660D-EPbF VCES = 600V IC = 60A, TC = 100°C tSC 5μs, TJ(max) = 175°C G C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C C VCE(on) typ. = 1.
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