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IRGP4078DPBF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGP4078DPBF datasheet PDF. This datasheet also covers the IRGP4078D-EPBF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE (ON) Trench IGBT Technology.
  • Low Switching Losses.
  • Maximum Junction temperature 175°C.
  • 5 µs short circuit SOA.
  • Square RBSOA.
  • 100% of the parts tested for ILM.
  • Positive VCE (ON) Temperature co-efficient.
  • Ultra-low VF Hyperfast Diode.
  • Tight parameter distribution Benefits.
  • Device optimized for induction heating and soft switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGP4078D-EPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP4078D-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4072DPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4055DPBF PDP TRENCH IGBT
IRGP4062-EPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  IRGP4078DPbF IRGP4078D-EP  C   VCES = 600V INOMINAL = 50A G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-efficient • Ultra-low VF Hyperfast Diode • Tight parameter distribution Benefits • Device optimized for induction heating and soft switching applications • High Efficiency due to Low VCE(ON), Low Switching Losses and Ultra-low VF • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI TJ(MAX) = 175°C VCE(ON) typ. = 1.
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