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IRGP4078DPbF IRGP4078D-EP
C VCES = 600V INOMINAL = 50A
G E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-efficient • Ultra-low VF Hyperfast Diode • Tight parameter distribution Benefits • Device optimized for induction heating and soft switching applications • High Efficiency due to Low VCE(ON), Low Switching Losses and Ultra-low VF • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI
TJ(MAX) = 175°C VCE(ON) typ. = 1.
IRGP4078D-EPBF Datasheet
