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PD - 97250
IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRGP4068D-EPbF
Features
• • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra-low VF Hyperfast Diode Tight parameter distribution Lead Free Package
C
VCES = 600V IC = 48A, TC = 100°C
G E
tSC ≥ 5µs, TJ(max) = 175°C
n-channel
C
VCE(on) typ. = 1.
IRGP4068D-EPbF Datasheet
